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| GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 s (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) * * * * Maximum Ratings (Ta = 25C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 20 15 30 170 150 -55~150 Unit V V A W C C JEDEC JEITA TOSHIBA Weight: 4.6 g 2-16C1C 1 2002-01-18 GT15Q102 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) 3/4 Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1.5 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 15 A VGG = 15 V, RG = 56 W (Note1) Min 3/4 3/4 4.0 3/4 3/4 Typ. 3/4 3/4 3/4 2.1 850 0.05 0.12 0.16 0.56 3/4 Max 500 1.0 7.0 2.7 3/4 Unit nA mA V V pF 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.32 ms 3/4 0.74 C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT15Q301 -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2002-01-18 GT15Q102 IC - VCE 50 20 Common emitter VCE - VGE (V) Tc = -40C 16 40 (A) IC 20 30 Collector-emitter voltage 15 10 VCE 12 Collector current 20 VGE = 9 V 10 Common emitter Tc = 25C 0 0 1 2 3 4 5 8 30 15 4 IC = 6 A 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 Common emitter Tc = 25C 16 VCE - VGE (V) (V) Tc = 125C 16 VCE Collector-emitter voltage Collector-emitter voltage VCE 12 8 30 4 IC = 6 A 15 12 8 15 4 IC = 6 A 30 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 50 Common emitter 4 Common emitter VCE (sat) - Tc 30 Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V 40 VGE = 15 V 3 15 IC 30 Collector current (A) 2 IC = 6 A 20 25 1 10 Tc = 125C -40 0 0 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-18 GT15Q102 Switching time ton, tr - RG 1 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C 1 0.5 Switching time ton, tr - IC Common emitter VCC = 600 V VGG = 15 V RG = 56 W : Tc = 25C : Tc = 125C ton 0.1 0.05 0.03 tr 0.5 (ms) (ms) tr 0.3 0.3 ton, tr Switching time 0.05 0.03 Switching time 0.1 ton, tr 0.01 ton 0.01 3 5 10 30 50 100 300 500 0 5 10 15 20 Gate resistance RG (9) Collector current IC (A) Switching time toff, tf - RG 3 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C 3 Switching time toff, tf - IC Common emitter VCC = 600 V VGG = 15 V RG = 56 W : Tc = 25C : Tc = 125C toff (ms) (ms) 1 toff 1 toff, tf toff, tf Switching time 0.5 0.3 tf 0.5 0.3 Switching time tf 0.1 0.1 0.05 3 5 10 30 50 100 300 0.05 0 5 10 15 20 Gate resistance RG (9) Collector current IC (A) Switching loss 10 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C Note2 Eon, Eoff - RG 10 5 3 Switching loss Common emitter VCC = 600 V VGG = 15 V RG = 56 W : Tc = 25C : Tc = 125C Note2 Eon, Eoff - IC (mJ) 3 Eon, Eoff Eoff 1 0.5 0.3 Eon, Eoff Switching loss Eon (mJ) 5 1 0.5 0.3 Eon Eoff Switching loss 0.1 3 5 10 30 50 100 300 500 0.1 0 5 10 15 20 Gate resistance RG (9) Collector current IC (A) 4 2002-01-18 GT15Q102 C - VCE 3000 1000 Common emitter VCE, VGE - QG 20 (V) 1000 (pF) VCE Cies RL = 40 W 800 Tc = 25C 16 Capacitance C 300 Collector-emitter voltage 600 600 400 400 12 100 Common emitter 30 VGE = 0 f = 1 MHz Tc = 25C 10 1 3 10 30 100 300 Cres 1000 Coes VCE = 200 V 8 200 4 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) Safe operating area 100 50 I max (pulsed)* C 30 IC max (continuous) 10 5 3 *: Single nonrepetitive pulse Tc = 25C 0.5 Curves must be 0.3 derated linearly with increase in temperature. 0.1 1 3 10 30 1 DC operation 100 ms* 1 ms* 10 ms* 50 30 50 ms* Reverse bias SOA (A) (A) 10 5 3 IC Collector current Collector current IC 1 0.5 0.3 Tj < 125C = VGE = 15 V RG = 56 W 100 300 1000 3000 0.1 1 3 10 30 100 300 1000 3000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 10 10 3 Tc = 25C 2 1 0 Rth (t) - tw Transient thermal impedance Rth (t) (C/W) 10 10 10 10 10 10 -1 -2 -3 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Pulse width tw (s) 5 2002-01-18 Gate-emitter voltage VGE (V) GT15Q102 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-18 |
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